Analysis on Forward/Backward Current Distribution and Off-current for Doping Concentration of Double Gate MOSFET
نویسندگان
چکیده
منابع مشابه
analysis and improvement of off-state current in biaxially strained si nano p-mosfet by virtual substrate’s doping control
in biaxially strained p-mosfet with si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. in this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . using simulation the impact of this method on the parasit...
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ژورنال
عنوان ژورنال: Journal of the Korea Institute of Information and Communication Engineering
سال: 2013
ISSN: 2234-4772
DOI: 10.6109/jkiice.2013.17.10.2403